2

Arsenic polyps on contacts to GaAs

Year:
1989
Language:
english
File:
PDF, 948 KB
english, 1989
9

Selective InAs growth by chemical beam epitaxy

Year:
1996
Language:
english
File:
PDF, 429 KB
english, 1996
10

Bulk leakage in avalanche diodes due to silicon-metallization reactions

Year:
1975
Language:
english
File:
PDF, 846 KB
english, 1975
12

Low-frequency oscillations and routes to chaos in semi-insulating GaAs

Year:
1985
Language:
english
File:
PDF, 298 KB
english, 1985
13

Hyperabrupt current switching in GaAsAlAs superlattices

Year:
1991
Language:
english
File:
PDF, 306 KB
english, 1991
16

From Discoveries to Novel Nanodevices

Year:
1999
Language:
english
File:
PDF, 58 KB
english, 1999
21

I-3 low-high profile TRAPATT structure

Year:
1974
Language:
english
File:
PDF, 165 KB
english, 1974
27

Origin of the Fixed Charge in Thermally Oxidized Silicon

Year:
1977
Language:
english
File:
PDF, 645 KB
english, 1977
31

An exclusive-nor based on resonant interband tunneling FET's

Year:
1996
Language:
english
File:
PDF, 286 KB
english, 1996
40

GaAs MESFET fabrication without using photoresist

Year:
1998
Language:
english
File:
PDF, 66 KB
english, 1998
45

Tamm states and donors at InAs/AlSb interfaces

Year:
1995
Language:
english
File:
PDF, 1.01 MB
english, 1995
50

Comparison of GaAs MESFET noise figures

Year:
1985
Language:
english
File:
PDF, 246 KB
english, 1985